Sense amplifier system for semiconductor memory


PURPOSE: To attain a high speed sense operation by a latch-type sense amplifier and further to reduce power consumption in the sense operation by setting the pre-charge potential of a sense amplifier driving signal for sensing different from that of a bit line. CONSTITUTION: By pre-charging a sense amplifier driving signal line 3 for sensing at a voltage lower by the threshold value of MOS transistors Q 4 and Q 6 for the sense of a sense amplifier SA, the sense operation is started by making on either of the MOS transistors Q 4 or Q 6 for sensing immediately after a time t 0 ' when a sense driving signal SE becomes active. Similarly, by pre- charging a sense amplifier driving signal line 2 at the voltage higher by the threshold of MOS transistors Q 5 and Q 7 for the restoration of the sense amplifier SA, either of the MOS transistors Q 5 or Q 7 for the restoration is made on, thereby restoring to normal immediately after a time t 1 ' when a restoring signal, the inverse of RES becomes active. COPYRIGHT: (C)1987,JPO&Japio




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Cited By (3)

    Publication numberPublication dateAssigneeTitle
    JP-2008269785-ANovember 06, 2008Renesas Technology Corp, 株式会社ルネサステクノロジ半導体記憶装置
    JP-H01133287-AMay 25, 1989Mitsubishi Electric CorpDevice and method for driving sense amplifier in dynamic random access memory
    US-6285613-B1September 04, 2001Kabushiki Kaisha ToshibaSemiconductor memory device