Semiconductor device

  • Inventors:
  • Assignees: Nec Corp
  • Publication Date: August 08, 1980
  • Publication Number: JP-S55103740-A


PURPOSE: To obtain a thermally stable semiconductor device, by inserting a different kind of metal between an alloy layer and a wiring metal, in a semiconductor device having an alloy layer composed of a polycrystalline semiconductor coated on a semiconductor substrate and a metal, and a metal wiring layer directly connected to this alloy layer. CONSTITUTION: Platinum silicide (PtSi) 207 and aluminum 209 formed on polycrystalline silicon 205 are connected by means of titanium 209. Consequently, even if silicon substrate 20 is heated subsequently for the purpose of stabilizing the characteristics, no reaction takes place between PtSi and aluminum and no loss occurs on aluminum. COPYRIGHT: (C)1980,JPO&Japio




Download Full PDF Version (Non-Commercial Use)

Patent Citations (5)

NO-Patent Citations (0)


Cited By (4)