高抵抗酸化亜鉛単結晶、およびその製造方法

High resistance zinc oxide single crystal and method for producing the same

Abstract

【課題】Li濃度が極低濃度で、抵抗率の高い各種デバイス用酸化亜鉛単結晶の製造方法を提供する。 【解決手段】実質的にLiを含まない原料26および鉱化材溶液を用いるとともに、過酸化物の存在化で酸素分圧を高めて水熱合成することにより、所望の酸化亜鉛単結晶を得る。過酸化物は、過酸化水素に代表される過酸化物を少なくても1種以上、分解で生じる酸素換算で鉱化材溶液に対し0.02〜0.5モル/リットルの範囲の濃度で加える。 【選択図】図1
PROBLEM TO BE SOLVED: To provide a method for producing a zinc oxide single crystal for various devices where Li concentration is extremely low and resistivity is high. SOLUTION: The desired zinc oxide single crystal is obtained by using a raw material 26 not containing Li substantially and a mineralizer solution and by a hydrothermal synthesis under the existence of a peroxide and at a high partial pressure of oxygen. At least one or more kinds of peroxides represented by hydrogen peroxide are added into the mineralizer solution by 0.02-0.5 mole/L in terms of oxygen generated by decomposition. COPYRIGHT: (C)2010,JPO&INPIT

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (2)

    Publication numberPublication dateAssigneeTitle
    JP-2007204324-AAugust 16, 2007Mitsubishi Chemicals Corp, Tokyo Denpa Co Ltd, 三菱化学株式会社, 東京電波株式会社Manufacturing method of high purity zinc oxide single crystal, and high purity zinc oxide single crystal
    JP-H06279192-AOctober 04, 1994Ngk Insulators Ltd, 日本碍子株式会社Piezoelectric semiconductor and its production

NO-Patent Citations (0)

    Title

Cited By (0)

    Publication numberPublication dateAssigneeTitle